general description features this power mosfet is designed for low voltage, high speed power switching applications such as switching regulators, conveters, solenoid and relay drivers. ? higher current rating ? lower r ds(on) , lower capacitances ? lower total gate charge ? tighter vsd specifications ? avalanche energy specified 3 d s g absolute maximum ratings rating symbol value unit drain to current continuous pulsed (note 1) i d i dm 6.0 21 a gate-to-source voltage continue v gs 20 v total power dissipation derate above 25 : p d 96 0.77 w w/ : single pulse drain-to-source avalanche energy t j = 25 : (v dd = 100v, v gs = 10v, i l = 6a, l = 10mh, r g = 25
) e as 180 mj operating and storage temperature range t j , t stg -55 to 150 : thermal resistance junction to case junction to ambient jc ja 1.70 62 : /w maximum lead temperature for soldering purposes, 1/8 from case for 10 seconds t l 300 : IRF730 6.0a 400v n channel power mosfet mechanical dimensions description 1 3 case 2 g d s to-220 dimension in mm
electrical characteristics unless otherwise specified, t j = 25 : . c IRF730 characteristic symbol min typ max units drain-source breakdown voltage (v gs = 0 v, i d = 250 ? a) v (br)dss 400 v drain-source leakage current (v ds = 400v, v gs = 0 v) (v ds = 400v, v gs = 0 v, t j = 125 : ) i dss 25 100 ? a gate-source leakage current-forward (v gsf = 20 v, v ds = 0 v) i gssf 100 na gate-source leakage current-reverse (v gsr = -20 v, v ds = 0 v) i gssr -100 na gate threshold voltage (v ds = v gs , i d = 250 ? a) v gs(th) 2.0 4.0 v static drain-source on-resistance (v gs = 10 v, i d = 3a) (note 4) r ds(on) 1.0
forward transconductance (v ds = 50v, i d = 3 a) (note 4) g fs 2.9 mhos input capacitance c iss 515 720 pf output capacitance c oss 185 260 pf reverse transfer capacitance (v ds = 25 v, v gs = 0 v, f = 1.0 mhz) c rss 15 30 pf turn-on delay time t d(on) 7 10 ns rise time t r 11 20 ns turn-off delay time t d(off) 19 40 ns fall time (v dd = 200 v, i d = 6 a, r g = 9.1
, v gs = 10 v) (note 4) t f 10 20 ns total gate charge q g 9.5 nc gate-source charge q gs 2 nc gate-drain charge (v ds = 320v, i d = 6a v gs = 10 v) (note 4) q gd 3 nc internal drain inductance (measured from the drain lead 0.25? from package to center of die) l d 4.5 nh internal drain inductance (measured from the source lead 0.25? from package to source bond pad) l s 7.5 nh source-drain diode characteristics reverse recovery charge q rr 1.6 c forward turn-on time t on ** reverse recovery time i f = 6a, di/dt = 100a/s , t j = 25 : (note 4) t rr 270 ns diode forward voltage i s = 6a, v gs = 0 v, t j = 25 : (note 4) v sd 1.5 v note (1) repetitive rating; pulse width limited by max. junction temperature (2) v dd = 50v, starting t j = 25 : , l=24mh, r g = 25
, i as = 4.5a (3) i sd 4.5a, di/dt 75a/s, v dd v (br)dss , t j 150 : (4) pulse test: pulse width 300s, duty cycle 2% ** negligible, dominated by circuit inductance IRF730 6.0a 400v n channel power mosfet
s m a r t s t a r t e c h n o l o g y , i n c . 2 figure 1 . id versus vds curve figure 2 . rdon versus tj curve figure 3 . vgs versus qg curve figure 4 . capacitor versus vds curve 0 2 4 6 8 10 12 0.00 10.00 20.00 30.00 total gate charge, qg (nc) gate-to-source voltage, vgs (v) vds = 320 v id = 5.5 a 1 10 100 1000 10000 1.0 10.0 100.0 1000.0 drain-to-source voltage, vds (v) capacitor (pf) tc = 25 c f = 1 mhz vgs = 0 v ciss =cgd+cgs coss=cds+cgd crss=cgd 0 2 4 6 8 10 12 0.1 1 10 drain-to-source voltage, vds (v) drain current, id (a) tc = 25 c pulsewidth =20us vgs = 10v (top), 8v, 7v, 6v 5.5v, 5v, 4.5v (bottom) 0 0.5 1 1.5 2 2.5 3 -60 -20 20 60 100 140 junction tem perature, tj (c) normalized drain-to-source resistance, rdon vgs = 10 v id = 5.5 a figure 5 . transient thermal impedance curve 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (second) normalized thermal impedance, zthjc duty cycle = 0.5 (top), 0.2, 0.1, 0.05, 0.02, 0.01, single pulse (bottom) IRF730 6.0a 400v n chann pwr msft
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